KBP106G C2G Taiwan Semiconductor Corporation


KBP101G-KBP107G_Rev.D13_DS.pdf Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A KBP
Packaging: Tube
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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Technische Details KBP106G C2G Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1PHASE 800V 1A KBP, Packaging: Tube, Package / Case: 4-SIP, KBP, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: KBP, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.