KSC2316YTA ON Semiconductor
Hersteller: ON SemiconductorТранзистор NPN; Ptot, Вт = 0,9; Uceo, В = 120; Тип монт. = smd; ft, МГц = 120; hFE = 120 @ 100 мA, 5 В; Icutoff-max = 100 нА; Uceo(sat), В @ Ic, Ib = 1 @ 50 мA, 500 мА; Тексп, °С = -55...+150; TO-92-3
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 1.42 EUR |
| 10+ | 1.22 EUR |
| 100+ | 1.08 EUR |
Produktrezensionen
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Technische Details KSC2316YTA ON Semiconductor
Description: TRANS NPN 120V 0.8A TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V, Frequency - Transition: 120MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 900 mW.
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Description: TRANS NPN 120V 0.8A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 900 mW |
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KSC2316YTA | Hersteller : onsemi |
Description: TRANS NPN 120V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 900 mW |
Produkt ist nicht verfügbar |
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KSC2316YTA | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Transistor |
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