KSE13003H1ASTU onsemi
Hersteller: onsemi
Description: TRANS NPN 400V 1.5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
Description: TRANS NPN 400V 1.5A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 20 W
auf Bestellung 1781 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.77 EUR |
60+ | 1.46 EUR |
120+ | 1.06 EUR |
540+ | 0.89 EUR |
1020+ | 0.75 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details KSE13003H1ASTU onsemi
Description: TRANS NPN 400V 1.5A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A, DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V, Frequency - Transition: 4MHz, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 20 W.
Weitere Produktangebote KSE13003H1ASTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
KSE13003H1ASTU | Hersteller : onsemi |
Description: TRANS NPN 400V 1.5A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 9 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 20 W |
auf Bestellung 12 Stücke: Lieferzeit 21-28 Tag (e) |
||
KSE13003H1ASTU | Hersteller : ONSEMI |
Description: ONSEMI - KSE13003H1ASTU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1836 Stücke: Lieferzeit 14-21 Tag (e) |
||
KSE13003H1ASTU | Hersteller : ON Semiconductor | Trans GP BJT NPN 400V 1.5A 20000mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
||
KSE13003H1ASTU | Hersteller : ON Semiconductor | Trans GP BJT NPN 400V 1.5A 20000mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
||
KSE13003H1ASTU | Hersteller : onsemi / Fairchild | Bipolar Transistors - BJT NPN Si Transistor |
Produkt ist nicht verfügbar |