KSP06BU

KSP06BU onsemi / Fairchild


KSP06_D-2314788.pdf Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
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Lieferzeit 14-28 Tag (e)
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Technische Details KSP06BU onsemi / Fairchild

Description: TRANS NPN 80V 0.5A TO92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 625 mW.

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KSP06BU KSP06BU Hersteller : ON Semiconductor ksp06-d.pdf Trans GP BJT NPN 80V 0.5A 625mW 3-Pin TO-92 Bag
Produkt ist nicht verfügbar
KSP06BU KSP06BU Hersteller : onsemi ksp06-d.pdf Description: TRANS NPN 80V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
KSP06BU Hersteller : Diodes Incorporated ksp06-d.pdf Bipolar Transistors - BJT
Produkt ist nicht verfügbar