MBR10150HC0G

MBR10150HC0G Taiwan Semiconductor Corporation


MBR1035%20SERIES_M2103.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details MBR10150HC0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 150V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 150 V.