MBR120100CTR GeneSiC Semiconductor


20mbr12045ct_thru_mbr120100ctr.pdf Hersteller: GeneSiC Semiconductor
Diode Schottky 100V 120A 3-Pin Twin Tower
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Technische Details MBR120100CTR GeneSiC Semiconductor

Description: DIODE MOD SCHOT 100V 120A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 120A (DC), Supplier Device Package: Twin Tower, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A, Current - Reverse Leakage @ Vr: 3 mA @ 20 V.

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MBR120100CTR MBR120100CTR Hersteller : GeneSiC Semiconductor mbr120100ct.pdf Description: DIODE MOD SCHOT 100V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBR120100CTR MBR120100CTR Hersteller : GeneSiC Semiconductor mbr120100ctr-2452047.pdf Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 120A100P/70
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