MBR120150CTR

MBR120150CTR GeneSiC Semiconductor


mbr120150ct.pdf Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 150V 60A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
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Technische Details MBR120150CTR GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 150V 60A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 60A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 60 A, Current - Reverse Leakage @ Vr: 1 mA @ 150 V.

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MBR120150CTR MBR120150CTR Hersteller : GeneSiC Semiconductor mbr120150ctr-1856746.pdf Discrete Semiconductor Modules 150V 120A Reverse
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