MBR12040CT GeneSiC Semiconductor


mbr12020ctr.pdf Hersteller: GeneSiC Semiconductor
Rectifier Diode Schottky 40V 120A 3-Pin Twin Tower
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Technische Details MBR12040CT GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 40V 120A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 120A (DC), Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A, Current - Reverse Leakage @ Vr: 3 mA @ 20 V.

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MBR12040CT MBR12040CT Hersteller : GeneSiC Semiconductor mbr12020ct.pdf Description: DIODE MOD SCHOTT 40V 120A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120A (DC)
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 120 A
Current - Reverse Leakage @ Vr: 3 mA @ 20 V
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MBR12040CT MBR12040CT Hersteller : GeneSiC Semiconductor mbr12040ct-2451358.pdf Discrete Semiconductor Modules 40V 120A Schottky Recovery
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