MBR200100CT GeneSiC Semiconductor
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Technische Details MBR200100CT GeneSiC Semiconductor
Description: DIODE MOD SCHOT 100V 200A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: Twin Tower, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A, Current - Reverse Leakage @ Vr: 5 mA @ 20 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MBR200100CT | Hersteller : GeneSiC Semiconductor |
 Description: DIODE MOD SCHOT 100V 200A 2TOWERPackaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200A (DC) Supplier Device Package: Twin Tower Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 100 A Current - Reverse Leakage @ Vr: 5 mA @ 20 V |
Produkt ist nicht verfügbar |
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MBR200100CT | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 200A100P/70 |
Produkt ist nicht verfügbar |