MBR20030CTR GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 30V 200A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 200A (DC), Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A, Current - Reverse Leakage @ Vr: 5 mA @ 20 V.