MBR30200PTHC0G

MBR30200PTHC0G Taiwan Semiconductor Corporation


MBR3035PT%20SERIES_K2103.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details MBR30200PTHC0G Taiwan Semiconductor Corporation

Description: DIODE ARR SCHOT 200V 30A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A, Supplier Device Package: TO-247AD (TO-3P), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A, Current - Reverse Leakage @ Vr: 100 µA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.