MBR3580R GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
Description: DIODE SCHOTTKY REV 80V 35A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A
Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V
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Technische Details MBR3580R GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 80V 35A DO4, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-4, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 35 A, Current - Reverse Leakage @ Vr: 1.5 mA @ 20 V.
Weitere Produktangebote MBR3580R
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MBR3580R | Hersteller : GeneSiC Semiconductor | Schottky Diodes & Rectifiers 80V - 35A Schottky Rectifier |
Produkt ist nicht verfügbar |