MBR50060CT

MBR50060CT GeneSiC Semiconductor


mbr50060ct-1856859.pdf Hersteller: GeneSiC Semiconductor
Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 500A 60P42RV
auf Bestellung 21 Stücke:

Lieferzeit 14-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details MBR50060CT GeneSiC Semiconductor

Description: DIODE MODULE 600V 250A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 250A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.

Weitere Produktangebote MBR50060CT

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MBR50060CT MBR50060CT Hersteller : GeneSiC Semiconductor mbr500100ctr.pdf Description: DIODE MODULE 600V 250A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 250 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Produkt ist nicht verfügbar