MBR600200CT GeneSiC Semiconductor


101mbr600150ct_thru_mbr600200ctr.pdf Hersteller: GeneSiC Semiconductor
Silicon Power Schottky Diode
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Technische Details MBR600200CT GeneSiC Semiconductor

Description: DIODE MOD SCHOT 200V 300A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A, Current - Reverse Leakage @ Vr: 3 mA @ 200 V.

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MBR600200CT MBR600200CT Hersteller : GeneSiC Semiconductor mbr600150ct.pdf Description: DIODE MOD SCHOT 200V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
Current - Reverse Leakage @ Vr: 3 mA @ 200 V
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MBR600200CT MBR600200CT Hersteller : GeneSiC Semiconductor mbr600200ct-2451851.pdf Discrete Semiconductor Modules 150V 600A Forward
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