MBR60020CTR GeneSiC Semiconductor


38690989712376784mbr60020ct_thru_mbr60040ctr.pdf Hersteller: GeneSiC Semiconductor
Diode Schottky 20V 600A 3-Pin Twin Tower
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Technische Details MBR60020CTR GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 20V 300A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 20 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.

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MBR60020CTR MBR60020CTR Hersteller : GeneSiC Semiconductor mbr60020ctr.pdf Description: DIODE MOD SCHOTT 20V 300A 2TOWER
Packaging: Bulk
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Twin Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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MBR60020CTR MBR60020CTR Hersteller : GeneSiC Semiconductor mbr60020ctr-2452214.pdf Discrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 600A 20P/14
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