MBR60045CT GeneSiC Semiconductor
Hersteller: GeneSiC SemiconductorDiscrete Semiconductor Modules SI PWR SCHOTTKY 2TWR 20-100V 600A 45P/32
auf Bestellung 16 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 351.13 EUR |
| 10+ | 312.78 EUR |
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Technische Details MBR60045CT GeneSiC Semiconductor
Description: DIODE MODULE 45V 300A 2TOWER, Packaging: Bulk, Package / Case: Twin Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Twin Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 45 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Weitere Produktangebote MBR60045CT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MBR60045CT | Hersteller : GeneSiC Semiconductor |
Rectifier Diode Schottky 45V 600A 3-Pin Twin Tower |
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MBR60045CT | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE 45V 300A 2TOWER Packaging: Bulk Package / Case: Twin Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Twin Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |