MBRT120200R

MBRT120200R GeneSiC Semiconductor


mbrt120150.pdf Hersteller: GeneSiC Semiconductor
Description: DIODE MOD SCHOTT 200V 60A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
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Technische Details MBRT120200R GeneSiC Semiconductor

Description: DIODE MOD SCHOTT 200V 60A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 60A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 60 A, Current - Reverse Leakage @ Vr: 1 mA @ 200 V.

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MBRT120200R MBRT120200R Hersteller : GeneSiC Semiconductor mbrt120200r-2451328.pdf Discrete Semiconductor Modules 200V 120A Reverse
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