Technische Details MBRT60030R DACO Semiconductor
Description: DIODE MODULE 30V 300A 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 1 Pair Common Anode, Current - Average Rectified (Io) (per Diode): 300A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V.
Weitere Produktangebote MBRT60030R
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MBRT60030R | Hersteller : GeneSiC Semiconductor |
 Rectifier Diode Schottky 30V 600A 3-Pin Three Tower |
Produkt ist nicht verfügbar |
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MBRT60030R | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE 30V 300A 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 300A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A Current - Reverse Leakage @ Vr: 1 mA @ 20 V |
Produkt ist nicht verfügbar |
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MBRT60030R | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules SI PWR SCHOTTKY 3TWR 20-100V 600A 30P/21 |
Produkt ist nicht verfügbar |