MCCD2007-TP

MCCD2007-TP Micro Commercial Components (MCC)


MCCD2007(DFN2030-6)-A-1626428.pdf Hersteller: Micro Commercial Components (MCC)
MOSFET 7A,20V Dual N Chann Mosfet,
auf Bestellung 201 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
40+1.3 EUR
49+ 1.08 EUR
100+ 0.73 EUR
500+ 0.55 EUR
Mindestbestellmenge: 40
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Technische Details MCCD2007-TP Micro Commercial Components (MCC)

Description: MOSFET 2N-CH 20V 7A, Packaging: Tape & Reel (TR), Package / Case: 6-WFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V, Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN2030-6, Part Status: Obsolete.

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MCCD2007-TP Hersteller : Micro Commercial Components 35mccd2007dfn2030-6-a.pdf Dual N-Channel Power MOSFET
Produkt ist nicht verfügbar
MCCD2007-TP MCCD2007-TP Hersteller : Micro Commercial Co MCCD2007(DFN2030-6)-A.pdf Description: MOSFET 2N-CH 20V 7A
Packaging: Tape & Reel (TR)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2030-6
Part Status: Obsolete
Produkt ist nicht verfügbar
MCCD2007-TP MCCD2007-TP Hersteller : Micro Commercial Co MCCD2007(DFN2030-6)-A.pdf Description: MOSFET 2N-CH 20V 7A
Packaging: Cut Tape (CT)
Package / Case: 6-WFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2030-6
Part Status: Obsolete
Produkt ist nicht verfügbar