MCD02N60-TP

MCD02N60-TP Micro Commercial Co


MCD02N60.pdf Hersteller: Micro Commercial Co
Description: MOSFET N-CH TO251
Packaging: Tape & Reel (TR)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1A, 10V
Power Dissipation (Max): 18W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 50 V
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Technische Details MCD02N60-TP Micro Commercial Co

Description: MOSFET N-CH TO251, Packaging: Tape & Reel (TR), Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tj), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 1A, 10V, Power Dissipation (Max): 18W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 50 V.