MCU04N60-TP Micro Commercial Components
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Technische Details MCU04N60-TP Micro Commercial Components
Description: MOSFET N-CH 600V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V.
Weitere Produktangebote MCU04N60-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MCU04N60-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Case: DPAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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MCU04N60-TP | Hersteller : Micro Commercial Co |
Description: MOSFET N-CH 600V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
Produkt ist nicht verfügbar |
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MCU04N60-TP | Hersteller : Micro Commercial Components (MCC) |
MOSFET N-Ch Enh FET 600Vds 4.0A 30Vgss 2.0 Ohm |
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| MCU04N60-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Case: DPAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |