MCU10N10-TP

MCU10N10-TP Micro Commercial Components


mcu10n10dpak.pdf Hersteller: Micro Commercial Components
Trans MOSFET N-CH 100V 9.6A 3-Pin(2+Tab) DPAK T/R
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Technische Details MCU10N10-TP Micro Commercial Components

Description: MOSFET N-CH 100V 9.6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.6A (Tj), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: D-Pak, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V.

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MCU10N10-TP MCU10N10-TP Hersteller : Micro Commercial Co MCU10N10.pdf Description: MOSFET N-CH 100V 9.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tj)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Produkt ist nicht verfügbar
MCU10N10-TP MCU10N10-TP Hersteller : Micro Commercial Co MCU10N10.pdf Description: MOSFET N-CH 100V 9.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tj)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Produkt ist nicht verfügbar