MCU20N10-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: MOSFET N-CH 100V DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V
Power Dissipation (Max): 47W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MCU20N10-TP Micro Commercial Co
Description: MOSFET N-CH 100V DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A, Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V, Power Dissipation (Max): 47W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 50 V.
Weitere Produktangebote MCU20N10-TP nach Preis ab 0.6 EUR bis 1.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
MCU20N10-TP | Hersteller : Micro Commercial Co |
Description: MOSFET N-CH 100V DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V Power Dissipation (Max): 47W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 50 V |
auf Bestellung 20668 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
MCU20N10-TP | Hersteller : Micro Commercial Components |
Trans MOSFET N-CH 100V 20A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |