MDS60L Microsemi Corporation
Hersteller: Microsemi CorporationDescription: RF TRANS NPN 65V 1.09GHZ 55AW
Packaging: Bulk
Package / Case: 55AW
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 120W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55AW
Part Status: Obsolete
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Technische Details MDS60L Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55AW, Packaging: Bulk, Package / Case: 55AW, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 10dB, Power - Max: 120W, Current - Collector (Ic) (Max): 4A, Voltage - Collector Emitter Breakdown (Max): 65V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V, Frequency - Transition: 1.03GHz ~ 1.09GHz, Supplier Device Package: 55AW, Part Status: Obsolete.
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Preis ohne MwSt |
|---|---|---|---|---|---|
| MDS60L | Hersteller : Microchip / Microsemi |
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