MJ10009

MJ10009 Solid State Inc.


MJ10008-ssi.pdf Hersteller: Solid State Inc.
Description: TRANS NPN DARL 500V 20A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 20A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40A @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 175 W
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+26 EUR
Mindestbestellmenge: 10
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Technische Details MJ10009 Solid State Inc.

Description: TRANS NPN DARL 500V 20A TO3, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 20A, Current - Collector Cutoff (Max): 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40A @ 5A, 5V, Supplier Device Package: TO-3, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 500 V, Power - Max: 175 W.

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MJ10009 MJ10009 Hersteller : NTE Electronics, Inc MJ10009.pdf Description: TRANS NPN DARL 500V 20A TO3
Packaging: Bag
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 20A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 175 W
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