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MJ10023 NTE Electronics, Inc.

MJ10022-ssi.pdf Hersteller: NTE Electronics, Inc.
Silicon NPN Darlington Transistor
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Technische Details MJ10023 NTE Electronics, Inc.

Description: TRANS NPN DARL 400V 40A TO3, Packaging: Bulk, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 40A, Current - Collector Cutoff (Max): 250µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V, Supplier Device Package: TO-3, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Power - Max: 250 W.

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MJ10023 MJ10023 Hersteller : Solid State Inc. MJ10022-ssi.pdf Description: TRANS NPN DARL 400V 40A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 5A, 40A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10A, 5V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 250 W
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