MJE180STU Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: POWER BIPOLAR TRANSISTOR, 3A, 40
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.5 W
auf Bestellung 3840 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1093+ | 0.66 EUR |
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Technische Details MJE180STU Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 3A, 40, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.5 W.
Weitere Produktangebote MJE180STU nach Preis ab 0.36 EUR bis 1.77 EUR
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MJE180STU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1500mW 3-Pin(3+Tab) TO-126 Tube |
auf Bestellung 1278 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE180STU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1500mW 3-Pin(3+Tab) TO-126 Tube |
auf Bestellung 1278 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE180STU | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 1484 Stücke: Lieferzeit 14-28 Tag (e) |
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MJE180STU | Hersteller : onsemi |
Description: TRANS NPN 40V 3A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.5 W |
auf Bestellung 1497 Stücke: Lieferzeit 21-28 Tag (e) |
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| MJE180STU | Hersteller : ONSEMI |
Description: ONSEMI - MJE180STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 22165 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE180STU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1500mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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MJE180STU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1500mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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MJE180STU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1500mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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MJE180STU | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1500mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |