Technische Details MJE344G ON Semiconductor
Description: TRANS NPN 200V 0.5A TO126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA, Current - Collector Cutoff (Max): 1mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Frequency - Transition: 15MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 200 V, Power - Max: 20 W.
Weitere Produktangebote MJE344G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MJE344G | Hersteller : ON Semiconductor |
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auf Bestellung 175 Stücke: Lieferzeit 21-28 Tag (e) |
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| MJE344G | Hersteller : ON |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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MJE344G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 200V 0.5A 20000mW 3-Pin(3+Tab) TO-225 Box |
Produkt ist nicht verfügbar |
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MJE344G | Hersteller : onsemi |
Description: TRANS NPN 200V 0.5A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Frequency - Transition: 15MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 20 W |
Produkt ist nicht verfügbar |