MMBT2907A RFG

MMBT2907A RFG Taiwan Semiconductor Corporation


DS_488_PN2907A,MMBT2907A,PZT2907A.pdf Hersteller: Taiwan Semiconductor Corporation
Description: TRANS PNP 60V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
auf Bestellung 12000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.087 EUR
6000+ 0.081 EUR
9000+ 0.067 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details MMBT2907A RFG Taiwan Semiconductor Corporation

Description: BJT SOT23 60V PNP 0.25W 150C, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 350 mW.

Weitere Produktangebote MMBT2907A RFG nach Preis ab 0.1 EUR bis 0.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MMBT2907A RFG MMBT2907A RFG Hersteller : Taiwan Semiconductor Corporation DS_488_PN2907A,MMBT2907A,PZT2907A.pdf Description: TRANS PNP 60V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
73+ 0.36 EUR
151+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 53
MMBT2907A RFG MMBT2907A RFG Hersteller : Taiwan Semiconductor mmbt2907a_b14.pdf Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
MMBT2907A RFG MMBT2907A RFG Hersteller : Taiwan Semiconductor mmbt2907a_b14.pdf Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
MMBT2907A RFG MMBT2907A RFG Hersteller : TAIWAN SEMICONDUCTOR DS_488_PN2907A,MMBT2907A,PZT2907A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
MMBT2907A RFG MMBT2907A RFG Hersteller : onsemi DS_488_PN2907A,MMBT2907A,PZT2907A.pdf Description: BJT SOT23 60V PNP 0.25W 150C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
MMBT2907A RFG MMBT2907A RFG Hersteller : onsemi DS_488_PN2907A,MMBT2907A,PZT2907A.pdf Description: BJT SOT23 60V PNP 0.25W 150C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
MMBT2907A RFG MMBT2907A RFG Hersteller : Taiwan Semiconductor DS_488_PN2907A,MMBT2907A,PZT2907A.pdf Bipolar Transistors - BJT -60V, -0.6A, PNP Bipolar Transistor
Produkt ist nicht verfügbar
MMBT2907A RFG MMBT2907A RFG Hersteller : TAIWAN SEMICONDUCTOR DS_488_PN2907A,MMBT2907A,PZT2907A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.35W; SOT23-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.35W
Case: SOT23-3
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Produkt ist nicht verfügbar