MMFTN620KDW-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 350mA; 0.2W; SOT363
Mounting: SMD
Case: SOT363
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2Ω
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 350mA; 0.2W; SOT363
Mounting: SMD
Case: SOT363
Application: automotive industry
Kind of package: reel; tape
Power dissipation: 0.2W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 0.35A
On-state resistance: 2Ω
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 5 Stücke
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Technische Details MMFTN620KDW-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET, SOT-363, 60V, 0.35A, 0,, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote MMFTN620KDW-AQ
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MMFTN620KDW-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, SOT-363, 60V, 0.35A, 0, Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MMFTN620KDW-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, SOT-363, 60V, 0.35A, 0, Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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MMFTN620KDW-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 350mA; 0.2W; SOT363 Mounting: SMD Case: SOT363 Application: automotive industry Kind of package: reel; tape Power dissipation: 0.2W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 0.35A On-state resistance: 2Ω Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |