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MPS650G

MPS650G onsemi


mps650-d.pdf Hersteller: onsemi
Description: TRANS NPN 40V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 41407 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1332+0.55 EUR
Mindestbestellmenge: 1332
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Technische Details MPS650G onsemi

Description: TRANS NPN 40V 2A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V, Frequency - Transition: 75MHz, Supplier Device Package: TO-92 (TO-226), Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.

Weitere Produktangebote MPS650G

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MPS650G Hersteller : ONSEMI ONSM-S-A0013298879-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - MPS650G - BIPOLAR, TRANSISTOR
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 41407 Stücke:
Lieferzeit 14-21 Tag (e)
MPS650G Hersteller : ON Semiconductor 434mps650-d.pdf Trans GP BJT NPN 40V 2A 625mW 3-Pin TO-92 Box
Produkt ist nicht verfügbar
MPS650G MPS650G Hersteller : ON Semiconductor 434mps650-d.pdf Trans GP BJT NPN 40V 2A 625mW 3-Pin TO-92 Box
Produkt ist nicht verfügbar
MPS650G MPS650G Hersteller : onsemi mps650-d.pdf Description: TRANS NPN 40V 2A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
MPS650G MPS650G Hersteller : onsemi MPS650_D-2316133.pdf Bipolar Transistors - BJT 2A 60V NPN
Produkt ist nicht verfügbar