MRF581G Microsemi Corporation
Hersteller: Microsemi CorporationDescription: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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Technische Details MRF581G Microsemi Corporation
Description: RF TRANS NPN 18V 5GHZ MICRO X, Packaging: Bulk, Package / Case: Micro-X ceramic (84C), Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13dB ~ 15.5dB, Power - Max: 1.25W, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 18V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz, Supplier Device Package: Micro-X ceramic (84C).