MSC010SDA070B MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 700V
Load current: 10A
Power dissipation: 36W
Semiconductor structure: single diode
Case: TO247-2
Max. forward impulse current: 58A
Max. forward voltage: 1.9V
Leakage current: 50µA
Anzahl je Verpackung: 1 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 120+ | 3.68 EUR |
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Technische Details MSC010SDA070B MICROCHIP (MICROSEMI)
Description: DIODE SIL CARBIDE 700V 24A TO247, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 353pF @ 1V, 1MHz, Current - Average Rectified (Io): 24A, Supplier Device Package: TO-247, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 700 V.
Weitere Produktangebote MSC010SDA070B nach Preis ab 3.68 EUR bis 8.71 EUR
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MSC010SDA070B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 700V; 10A; 36W; TO247-2 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 10A Power dissipation: 36W Semiconductor structure: single diode Case: TO247-2 Max. forward impulse current: 58A Max. forward voltage: 1.9V Leakage current: 50µA |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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MSC010SDA070B | Hersteller : Microchip Technology |
Schottky Diodes & Rectifiers UNRLS, FG, GEN2 SIC SBD |
auf Bestellung 3 Stücke: Lieferzeit 14-28 Tag (e) |
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MSC010SDA070B | Hersteller : Microchip Technology |
Description: DIODE SIL CARBIDE 700V 24A TO247 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 353pF @ 1V, 1MHz Current - Average Rectified (Io): 24A Supplier Device Package: TO-247 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 700 V |
auf Bestellung 240 Stücke: Lieferzeit 21-28 Tag (e) |
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| MSC010SDA070B | Hersteller : Microsemi |
MSC010SDA070B |
auf Bestellung 638 Stücke: Lieferzeit 14-21 Tag (e) |
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| MSC010SDA070B | Hersteller : Microchip Technology |
Zero Recovery Silicon Carbide Schottky Diode |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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