MSC015SMA070S MICROCHIP (MICROSEMI)
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Pulsed drain current: 315A
Power dissipation: 370W
Gate charge: 215nC
Polarisation: unipolar
Technology: SiC
Drain current: 89A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W
Drain-source voltage: 700V
Type of transistor: N-MOSFET
Case: D3PAK
On-state resistance: 19mΩ
Mounting: SMD
Pulsed drain current: 315A
Power dissipation: 370W
Gate charge: 215nC
Polarisation: unipolar
Technology: SiC
Drain current: 89A
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 40.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MSC015SMA070S MICROCHIP (MICROSEMI)
Description: SICFET N-CH 700V 126A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 126A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V, Power Dissipation (Max): 370W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ), Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V.
Weitere Produktangebote MSC015SMA070S nach Preis ab 40.14 EUR bis 90.3 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MSC015SMA070S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 89A; Idm: 315A; 370W Drain-source voltage: 700V Type of transistor: N-MOSFET Case: D3PAK On-state resistance: 19mΩ Mounting: SMD Pulsed drain current: 315A Power dissipation: 370W Gate charge: 215nC Polarisation: unipolar Technology: SiC Drain current: 89A Kind of channel: enhanced |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
MSC015SMA070S | Hersteller : Microsemi | SiC MOSFETs |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
MSC015SMA070S | Hersteller : Microchip Technology | SiC MOSFETs Automotive AEC-Q101 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||
MSC015SMA070S | Hersteller : Microchip Technology | MOSFET UNRLS, FG, SIC MOSFET, TO-268 |
auf Bestellung 180 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||
MSC015SMA070S | Hersteller : Microchip Technology |
Description: SICFET N-CH 700V 126A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 4mA (Typ) Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 700 V |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||
MSC015SMA070S | Hersteller : Microchip Technology | SiC MOSFETs |
auf Bestellung 320 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||
MSC015SMA070S | Hersteller : Microchip Technology | SiC MOSFETs Automotive AEC-Q101 |
Produkt ist nicht verfügbar |