MSC035SMA070B Microsemi
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 23.77 EUR |
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Technische Details MSC035SMA070B Microsemi
Description: MOSFET N-CH 700V TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V, Power Dissipation (Max): 283W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 2mA, Supplier Device Package: TO-247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V.
Weitere Produktangebote MSC035SMA070B nach Preis ab 28.31 EUR bis 37.02 EUR
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MSC035SMA070B | Hersteller : Microchip Technology |
 MOSFET MOSFET SIC 700 V 35 mOhm TO-247 |
auf Bestellung 420 Stücke: Lieferzeit 14-28 Tag (e) |
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MSC035SMA070B | Hersteller : Microchip Technology |
Description: MOSFET N-CH 700V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 30A, 20V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 2mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 700 V |
auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) |
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MSC035SMA070B | Hersteller : Microchip Technology |
Trans MOSFET SiC 700V 73A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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MSC035SMA070B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 283W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 192A Gate charge: 99nC Polarisation: unipolar Drain current: 54A Kind of channel: enhanced Drain-source voltage: 700V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC035SMA070B | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 700V; 54A; Idm: 192A; 283W Technology: SiC Mounting: THT Case: TO247-3 Power dissipation: 283W Type of transistor: N-MOSFET On-state resistance: 44mΩ Pulsed drain current: 192A Gate charge: 99nC Polarisation: unipolar Drain current: 54A Kind of channel: enhanced Drain-source voltage: 700V |
Produkt ist nicht verfügbar |