auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 64.19 EUR |
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Technische Details MSC040SMA120J Microsemi
Description: SICFET N-CH 1200V 53A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Weitere Produktangebote MSC040SMA120J nach Preis ab 76.65 EUR bis 98.51 EUR
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MSC040SMA120J | Hersteller : Microchip Technology |
 Discrete Semiconductor Modules MOSFET SIC 1200 V 40 mOhm SOT-227 |
auf Bestellung 130 Stücke: Lieferzeit 14-28 Tag (e) |
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MSC040SMA120J | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 1.2KV 53A 4-Pin SOT-227 Tube |
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MSC040SMA120J | Hersteller : Microchip Technology |
Trans MOSFET N-CH SiC 1.2KV 53A 4-Pin SOT-227 Tube |
Produkt ist nicht verfügbar |
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| MSC040SMA120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A Power dissipation: 208W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 105A Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 50mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC040SMA120J | Hersteller : Microchip Technology |
Description: SICFET N-CH 1200V 53A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
Produkt ist nicht verfügbar |
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| MSC040SMA120J | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 37A; SOT227B; screw; Idm: 105A Power dissipation: 208W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Pulsed drain current: 105A Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 50mΩ |
Produkt ist nicht verfügbar |