MSC040SMA120S Microchip Technology
auf Bestellung 73 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 60.81 EUR |
10+ | 56.11 EUR |
120+ | 48.83 EUR |
510+ | 47.35 EUR |
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Technische Details MSC040SMA120S Microchip Technology
Description: SICFET N-CH 1200V 64A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, Power Dissipation (Max): 303W, Vgs(th) (Max) @ Id: 2.6V @ 2mA, Supplier Device Package: D3Pak, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V.
Weitere Produktangebote MSC040SMA120S nach Preis ab 57.09 EUR bis 61.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MSC040SMA120S | Hersteller : Microchip Technology |
Description: SICFET N-CH 1200V 64A TO268 Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Power Dissipation (Max): 303W Vgs(th) (Max) @ Id: 2.6V @ 2mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V |
auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) |
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MSC040SMA120S | Hersteller : Microchip Technology | Trans MOSFET N-CH SiC 1.2KV 61A Automotive 3-Pin(2+Tab) D3PAK |
Produkt ist nicht verfügbar |
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MSC040SMA120S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W Power dissipation: 303W Mounting: SMD Case: D3PAK Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 159A Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC040SMA120S | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 45A; Idm: 159A; 303W Power dissipation: 303W Mounting: SMD Case: D3PAK Gate charge: 137nC Technology: SiC Kind of channel: enhanced Pulsed drain current: 159A Drain-source voltage: 1.2kV Drain current: 45A On-state resistance: 50mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |