MSC050SDA070BCT Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE SIL CARB 700V 88A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2034pF @ 1V, 1MHz
Current - Average Rectified (Io): 88A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 200 µA @ 700 V
auf Bestellung 38 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 52.34 EUR |
| 25+ | 48.26 EUR |
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Technische Details MSC050SDA070BCT Microchip Technology
Description: DIODE SIL CARB 700V 88A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2034pF @ 1V, 1MHz, Current - Average Rectified (Io): 88A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A, Current - Reverse Leakage @ Vr: 200 µA @ 700 V.
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Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 50A Semiconductor structure: common cathode; double Max. forward voltage: 1.9V Case: TO247-3 Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W Anzahl je Verpackung: 1 Stücke |
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SIC SBD 700 V 50 A TO-247 |
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MSC050SDA070BCT | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 700V; 50A; 123W; TO247-3 Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 700V Load current: 50A Semiconductor structure: common cathode; double Max. forward voltage: 1.9V Case: TO247-3 Leakage current: 0.25mA Max. forward impulse current: 124A Power dissipation: 123W |
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