MSC130SM120JCU2 Microchip Technology
auf Bestellung 11 Stücke:
Lieferzeit 399-413 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 244.76 EUR |
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Technische Details MSC130SM120JCU2 Microchip Technology
Description: SICFET N-CH 1.2KV 173A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 173A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, Power Dissipation (Max): 745W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 2mA, Supplier Device Package: SOT-227 (ISOTOP®), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V.
Weitere Produktangebote MSC130SM120JCU2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MSC130SM120JCU2 | Hersteller : Microchip Technology |
 Boost Chopper SiC MOSFET Power Module |
Produkt ist nicht verfügbar |
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| MSC130SM120JCU2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 350A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSC130SM120JCU2 | Hersteller : Microchip Technology |
Description: SICFET N-CH 1.2KV 173A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Power Dissipation (Max): 745W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SOT-227 (ISOTOP®) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V |
Produkt ist nicht verfügbar |
|
| MSC130SM120JCU2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 138A; SOT227B; screw; 745W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: boost chopper Pulsed drain current: 350A Case: SOT227B Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 138A On-state resistance: 16mΩ Power dissipation: 745W |
Produkt ist nicht verfügbar |