MSCSM120AM027CD3AG Microchip Technology
auf Bestellung 1 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3179.7 EUR |
| 100+ | 2406.25 EUR |
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Technische Details MSCSM120AM027CD3AG Microchip Technology
Description: SIC 2N-CH 1200V 733A D3, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.97kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 733A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V, Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 9mA, Supplier Device Package: D3, Part Status: Active.
Weitere Produktangebote MSCSM120AM027CD3AG nach Preis ab 3242.98 EUR bis 3242.98 EUR
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MSCSM120AM027CD3AG | Hersteller : Microchip Technology |
 Description: SIC 2N-CH 1200V 733A D3Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Supplier Device Package: D3 Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| MSCSM120AM027CD3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCSM120AM027CD3AG | Hersteller : Microchip Technology |
1200V/Phase Leg/SiC MOSFET Modules |
Produkt ist nicht verfügbar |
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| MSCSM120AM027CD3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 584A; D3; Idm: 1400A; 2.97kW Case: D3 Pulsed drain current: 1400A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 584A On-state resistance: 3.5mΩ Power dissipation: 2.97kW Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes |
Produkt ist nicht verfügbar |