MSCSM120AM02CT6LIAG

MSCSM120AM02CT6LIAG

MSCSM120AM02CT6LIAG

Hersteller: Microchip / Microsemi
Discrete Semiconductor Modules SiC MOSFET Power Module
Microsemi_MSCSM120AM02CT6LIAG-1843742.pdf
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Technische Details MSCSM120AM02CT6LIAG

Description: PM-MOSFET-SIC-SBD~-SP6C LI, Part Status: Active, Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tube, Supplier Device Package: SP6C LI, Vgs(th) (Max) @ Id: 2.8V @ 12mA, FET Feature: Silicon Carbide (SiC), Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V, Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V, Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V, Current - Continuous Drain (Id) @ 25°C: 947A (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), FET Type: 2 N Channel (Phase Leg), Power - Max: 3.75kW (Tc).

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MSCSM120AM02CT6LIAG
MSCSM120AM02CT6LIAG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C LI
Part Status: Active
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Supplier Device Package: SP6C LI
Vgs(th) (Max) @ Id: 2.8V @ 12mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Type: 2 N Channel (Phase Leg)
Power - Max: 3.75kW (Tc)
1244801-mscsm120am02ct6liag-datasheet
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