MSCSM120AM042CD3AG Microchip Technology
auf Bestellung 7 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2308.67 EUR |
| 10+ | 2232.93 EUR |
| 25+ | 2162.71 EUR |
| 100+ | 1915.37 EUR |
| 250+ | 1872.36 EUR |
| 500+ | 1829.44 EUR |
| 1000+ | 1827.15 EUR |
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Technische Details MSCSM120AM042CD3AG Microchip Technology
Description: SIC 2N-CH 1200V 495A D3, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2.031kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 495A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 6mA, Supplier Device Package: D3, Part Status: Active.
Weitere Produktangebote MSCSM120AM042CD3AG nach Preis ab 2247.31 EUR bis 2247.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MSCSM120AM042CD3AG | Hersteller : Microchip Technology |
 Description: SIC 2N-CH 1200V 495A D3Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Supplier Device Package: D3 Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| MSCSM120AM042CD3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MSCSM120AM042CD3AG | Hersteller : Microchip Technology |
UNRLS CC7147 |
Produkt ist nicht verfügbar |
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| MSCSM120AM042CD3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 395A; D3; Idm: 990A; 2031W; SiC Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Topology: MOSFET half-bridge + parrallel diodes Pulsed drain current: 990A Case: D3 Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 395A On-state resistance: 5.2mΩ Power dissipation: 2031W Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |