MSCSM120AM08CT3AG Microchip Technology
auf Bestellung 2 Stücke:
Lieferzeit 273-287 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1210.43 EUR |
| 100+ | 899.18 EUR |
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Technische Details MSCSM120AM08CT3AG Microchip Technology
Description: SIC 2N-CH 1200V 337A SP3F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.409kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 337A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V, Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 4mA, Supplier Device Package: SP3F, Part Status: Active.
Weitere Produktangebote MSCSM120AM08CT3AG nach Preis ab 1326.57 EUR bis 1326.57 EUR
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MSCSM120AM08CT3AG | Hersteller : Microchip Technology / Atmel |
 Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F |
auf Bestellung 2 Stücke: Lieferzeit 315-329 Tag (e) |
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| MSCSM120AM08CT3AG | Hersteller : Microchip Technology |
Phase Leg Sic Mosfet Power Module |
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| MSCSM120AM08CT3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Pulsed drain current: 675A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 268A On-state resistance: 7.8mΩ Power dissipation: 1409W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MSCSM120AM08CT3AG | Hersteller : Microchip Technology |
Description: SIC 2N-CH 1200V 337A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.409kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Supplier Device Package: SP3F Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120AM08CT3AG | Hersteller : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 1.2kV; 268A; SP3F; Press-in PCB Case: SP3F Pulsed drain current: 675A Semiconductor structure: SiC diode/transistor Drain-source voltage: 1.2kV Drain current: 268A On-state resistance: 7.8mΩ Power dissipation: 1409W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: SiC Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor |
Produkt ist nicht verfügbar |