MSCSM120AM31CT1AG

MSCSM120AM31CT1AG Microchip Technology / Atmel


Microsemi_MSCSM120AM31CT1AG_Phase_Leg_SiC_MOSFET-1855496.pdf Hersteller: Microchip Technology / Atmel
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F
auf Bestellung 7 Stücke:

Lieferzeit 315-329 Tag (e)
Anzahl Preis ohne MwSt
1+328.25 EUR
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Technische Details MSCSM120AM31CT1AG Microchip Technology / Atmel

Description: SIC 2N-CH 1200V 89A SP1F, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N Channel (Phase Leg), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 395W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: SP1F.

Weitere Produktangebote MSCSM120AM31CT1AG nach Preis ab 203.14 EUR bis 203.14 EUR

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MSCSM120AM31CT1AG Hersteller : Microchip Technology microsemi_mscsm120am31ct1ag_phase_leg_sic_mosfet.pdf Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+203.14 EUR
MSCSM120AM31CT1AG Hersteller : Microchip Technology microsemi_mscsm120am31ct1ag_phase_leg_sic_mosfet.pdf Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+203.14 EUR
MSCSM120AM31CT1AG
Produktcode: 191184
1244782-mscsm120am31ct1ag-datasheet Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
MSCSM120AM31CT1AG Hersteller : MICROCHIP (MICROSEMI) 1244782-mscsm120am31ct1ag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSCSM120AM31CT1AG Hersteller : Microchip Technology microsemi_mscsm120am31ct1ag_phase_leg_sic_mosfet.pdf Trans MOSFET N-CH SiC 1.2KV 89A 12-Pin Tube
Produkt ist nicht verfügbar
MSCSM120AM31CT1AG Hersteller : Microchip Technology 1244782-mscsm120am31ct1ag-datasheet UNRLS CC8152
Produkt ist nicht verfügbar
MSCSM120AM31CT1AG MSCSM120AM31CT1AG Hersteller : Microchip Technology 1244782-mscsm120am31ct1ag-datasheet Description: SIC 2N-CH 1200V 89A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP1F
Produkt ist nicht verfügbar
MSCSM120AM31CT1AG Hersteller : MICROCHIP (MICROSEMI) 1244782-mscsm120am31ct1ag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 71A; SP1F; Press-in PCB; 395W
Case: SP1F
Pulsed drain current: 180A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 71A
On-state resistance: 31mΩ
Power dissipation: 395W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge + parrallel diodes; NTC thermistor
Produkt ist nicht verfügbar