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MSCSM120TAM11CTPAG

MSCSM120TAM11CTPAG Microchip Technology


Microsemi_MSCSM120TAM11CTPAG_Triple_Phase_Leg_SiC_-1855574.pdf Hersteller: Microchip Technology
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P
auf Bestellung 2 Stücke:

Lieferzeit 315-329 Tag (e)
Anzahl Preis ohne MwSt
1+2603.51 EUR
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Technische Details MSCSM120TAM11CTPAG Microchip Technology

Description: SIC 6N-CH 1200V 251A SP6-P, Packaging: Tube, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.042kW (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 251A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V, Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V, Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V, Vgs(th) (Max) @ Id: 2.8V @ 3mA, Supplier Device Package: SP6-P, Part Status: Active.

Weitere Produktangebote MSCSM120TAM11CTPAG nach Preis ab 2655.3 EUR bis 2655.3 EUR

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MSCSM120TAM11CTPAG MSCSM120TAM11CTPAG Hersteller : Microchip Technology 1244791-mscsm120tam11ctpag-datasheet Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+2655.3 EUR
MSCSM120TAM11CTPAG Hersteller : Microchip Technology am11ctpag_triple_phase_leg_sic_mosfet_power_module_rv1.0.pdf Triple Phase Leg Sic Mosfet Power Module
Produkt ist nicht verfügbar
MSCSM120TAM11CTPAG Hersteller : MICROCHIP (MICROSEMI) 1244791-mscsm120tam11ctpag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSCSM120TAM11CTPAG Hersteller : MICROCHIP (MICROSEMI) 1244791-mscsm120tam11ctpag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 1.2kV; 200A; SP6P; Press-in PCB
Case: SP6P
Pulsed drain current: 500A
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10.4mΩ
Power dissipation: 1042W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET half-bridge x3 + parrallel diodes; NTC thermistor
Produkt ist nicht verfügbar