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MSCSM70TAM05TPAG Microchip Technology


nods.pdf Hersteller: Microchip Technology
Phase Leg SiC MOSFET Power Module
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Technische Details MSCSM70TAM05TPAG Microchip Technology

Category: Transistor modules MOSFET, Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W, Semiconductor structure: SiC diode/transistor, Drain-source voltage: 700V, Drain current: 278A, On-state resistance: 6.4mΩ, Power dissipation: 966W, Electrical mounting: Press-in PCB, Mechanical mounting: screw, Type of module: MOSFET transistor, Technology: SiC, Topology: MOSFET x3 half-bridge; NTC thermistor, Pulsed drain current: 700A, Case: SP6P, Anzahl je Verpackung: 1 Stücke.

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MSCSM70TAM05TPAG Hersteller : MICROCHIP (MICROSEMI) 1244937-mscsm70tam05tpag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Case: SP6P
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MSCSM70TAM05TPAG Hersteller : Microchip Technology nods.pdf Phase Leg SiC MOSFET Power Module
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MSCSM70TAM05TPAG MSCSM70TAM05TPAG Hersteller : Microchip Technology 1244937-mscsm70tam05tpag-datasheet Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
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MSCSM70TAM05TPAG MSCSM70TAM05TPAG Hersteller : Microchip Technology Microsemi_MSCSM70TAM05TPAG_Triple_Phase_Leg_SiC_MO-1855498.pdf Discrete Semiconductor Modules PM-MOSFET-SIC-SP6P
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MSCSM70TAM05TPAG Hersteller : MICROCHIP (MICROSEMI) 1244937-mscsm70tam05tpag-datasheet Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 700V; 278A; SP6P; Press-in PCB; 966W
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 700V
Drain current: 278A
On-state resistance: 6.4mΩ
Power dissipation: 966W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: SiC
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 700A
Case: SP6P
Produkt ist nicht verfügbar