MSJP20N65-BP

MSJP20N65-BP Micro Commercial Components (MCC)


MSJP20N65_TO_220ABH_-2509957.pdf Hersteller: Micro Commercial Components (MCC)
MOSFET N-Ch 650Vds 30Vgs 20A 60A 151W
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.65 EUR
10+ 12.27 EUR
100+ 10.04 EUR
500+ 8.55 EUR
1000+ 6.73 EUR
5000+ 6.71 EUR
Mindestbestellmenge: 4
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Technische Details MSJP20N65-BP Micro Commercial Components (MCC)

Description: MOSFET N-CH TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V, Power Dissipation (Max): 151W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220AB (H), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 100 V.

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MSJP20N65-BP MSJP20N65-BP Hersteller : Micro Commercial Components msjp20n65to-220abh.pdf Trans MOSFET N-CH 650V 20A 3-Pin(3+Tab) TO-220AB(H) Tube
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MSJP20N65-BP MSJP20N65-BP Hersteller : Micro Commercial Co MSJP20N65(TO-220ABH).pdf Description: MOSFET N-CH TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 10A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB (H)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1724 pF @ 100 V
Produkt ist nicht verfügbar