MSJU11N65-TP

MSJU11N65-TP

MSJU11N65-TP

Hersteller: Micro Commercial Components
Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) DPAK T/R
msju11n65dpak.pdf
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Technische Details MSJU11N65-TP

Description: N-CHANNEL MOSFET, TO-252 PACKAGE, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A, Drain to Source Voltage (Vdss): 650V, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Supplier Device Package: DPAK, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 78W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 901pF @ 50V.

Preis MSJU11N65-TP ab 0 EUR bis 0 EUR

MSJU11N65-TP
MSJU11N65-TP
Hersteller: Micro Commercial Components (MCC)
MOSFET N-Ch 650Vds 30Vgs 11A 33A 78W
MSJU11N65_DPAK_-2509932.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSJU11N65-TP
MSJU11N65-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, TO-252 PACKAGE
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 650V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 901pF @ 50V
MSJU11N65(DPAK)-V1.pdf
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MSJU11N65-TP
MSJU11N65-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 650V 11A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
MSJU11N65(DPAK).pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
MSJU11N65-TP
MSJU11N65-TP
Hersteller: Micro Commercial Co
Description: MOSFET N-CH 650V 11A DPAK
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
MSJU11N65(DPAK).pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen