Produkte > GENESIC SEMICONDUCTOR > MSRT150120(A)D
MSRT150120(A)D

MSRT150120(A)D GeneSiC Semiconductor


msrt150120(a)d_thru_msrt150160(a)d.pdf Hersteller: GeneSiC Semiconductor
Description: DIODE GEN 1.2KV 150A 3 TOWER
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details MSRT150120(A)D GeneSiC Semiconductor

Description: DIODE GEN 1.2KV 150A 3 TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 150A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.

Weitere Produktangebote MSRT150120(A)D

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MSRT150120AD MSRT150120AD Hersteller : GeneSiC Semiconductor Description: DIODE GEN 1.2KV 150A 3 TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Produkt ist nicht verfügbar
MSRT150120(A)D MSRT150120(A)D Hersteller : GeneSiC Semiconductor msrt150120(a)d_thru_msrt150160(a)d-542013.pdf Discrete Semiconductor Modules 1200V 150A Forward
Produkt ist nicht verfügbar