MSRT200160(A)D GeneSiC Semiconductor
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Technische Details MSRT200160(A)D GeneSiC Semiconductor
Description: DIODE MODULE GP 1.6KV 3TOWER, Packaging: Bulk, Package / Case: Three Tower, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 200A, Supplier Device Package: Three Tower, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A, Current - Reverse Leakage @ Vr: 10 µA @ 1600 V.
Weitere Produktangebote MSRT200160(A)D
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MSRT200160(A)D | Hersteller : GeneSiC Semiconductor |
 Description: DIODE GEN 1.6KV 200A 3 TOWER |
Produkt ist nicht verfügbar |
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MSRT200160AD | Hersteller : GeneSiC Semiconductor |
Description: DIODE MODULE GP 1.6KV 3TOWER Packaging: Bulk Package / Case: Three Tower Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: Three Tower Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
Produkt ist nicht verfügbar |
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d_SPL.jpg "MSRT200160(A)D") |
MSRT200160(A)D | Hersteller : GeneSiC Semiconductor |
Discrete Semiconductor Modules 1600V 200A Forward |
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